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MLC NAND-type Flash Memory Built-In Self Test for research

MLC NAND-형 Flash Memory 내장 자체 테스트에 대한 연구

  • 김진완 (숭실대학교 컴퓨터학부) ;
  • 김태환 (숭실대학교 컴퓨터학부) ;
  • 장훈 (숭실대학교 컴퓨터학부)
  • Received : 2013.11.19
  • Published : 2014.03.25
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Abstract

As the occupancy rate of the flash memory increases in the storage media market for the embedded system and the semi-conductor industry grows, the demand and supply of flash memory is increasing by a big margin. They are especially used in large quantity in the smart phones, tablets, PC, SSD and Soc(System on Chip) etc. The flash memory is divided into the NOR type and NAND type according to the cell arrangement structure and the NAND type is divided into the SLC(Single Level Cell) and MLC(Multi Level Cell) according to the number of bits that can be stored in each cell. Many tests have been performed on NOR type such as BIST(Bulit-In Self Test) and BIRA(Bulit-In Redundancy Analysis) etc, but there is little study on the NAND type. For the case of the existing BIST, the test can be proceeded using external equipments like ATE of high price. However, this paper is an attempt for the improvement of credibility and harvest rate of the system by proposing the BIST for the MLC NAND type flash memory of Finite State Machine structure on which the pattern test can be performed without external equipment since the necessary patterns are embedded in the interior and which uses the MLC NAND March(x) algorithm and pattern which had been proposed for the MLC NAND type flash memory.

임베디드 시스템의 저장매체 시장의 플래시 메모리의 점유율이 증가되고 반도체 산업이 성장함에 따라 플래시 메모리의 수요와 공급이 큰 폭으로 증가하고 있다. 특히 스마트폰, 테블릿 PC, SSD등 SoC(System on Chip)산업에 많이 사용되고 있다. 플래시 메모리는 셀 배열 구조에 따라 NOR-형과 NAND-형으로 나뉘고 NAND-형은 다시 Cell당 저장 가능한 bit수에 따라서 SLC(Single Level Cell)과 MLC(Multi Level Cell)로 구분된다. NOR-형은 BIST(Bulit-In Self Test), BIRA(Bulit-In Redundancy Analysis)등의 많은 연구가 진행되었지만 NAND-형의 경우 BIST 연구가 적다. 기존의 BIST의 경우 고가의 ATE 등의 외부 장비를 사용하여 테스트를 진행해야한다. 하지만 본 논문은 MLC NAND-형 플래시 메모리를 위해 제안되었던 MLC NAND March(x)알고리즘과 패턴을 사용하며 내부에 필요한 패턴을 내장하여 외부 장비 없이 패턴 테스트가 가능한 유한상태머신(Finite State Machine) 기반구조의 MLC NAND-형 플래시 메모리를 위한 BIST를 제안하여 시스템의 신뢰도 향상과 수율향상을 위한 시도이다.

Keywords

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