한국전자통신학회논문지 (The Journal of the Korea institute of electronic communication sciences)

한국전자통신학회 (Korea Institute of Electronic Communication Science)
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대면적·단일층·단결정 그래핀의 합성

Synthesis of large area·single layer/crystalline graphene

  • 최병상 (조선대학교 공과대학 금속재료공학과)
  • 투고 : 2013.11.25
  • 심사 : 2014.02.11
  • 발행 : 2014.02.28
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초록

CVD를 이용하여 다결정 및 단결정 Cu 시편에 대한 그래핀의 합성 실험을 수행하였으며, 광학현미경 조직사진과 이미지 분석을 통하여 그래핀의 성장거동과 합성에 대한 특성평가 결과를 제시 하였다. 다결정 Cu 시편의 결정성에 따른 그래핀의 성장에 대한 분석의 결과 그래핀의 성장이 다결정 Cu 시편의 결정에 따라 일정한 방향성을 갖고 성장한다는 것을 알 수 있었으며, 다결정 Cu 시편의 이웃하는 단일 결정 내에서 성장하는 그래핀 형성에 대한 이미지 분석의 결과 단층, 복층, 그리고 3층의 그래핀에 대한 특성 분석이 가능하였다. 또한, (111) 방향을 갖는 단결정 Cu 시편을 이용하여 약 $3mm^2$ 정도의 비교적 넓은 면적을 갖는 고품질의 단일층 단결정 그래핀 합성과 이에 대한 특성평가 결과를 나타내고 있다.

Using chemical vapor deposition(CVD), the synthesis of graphene was performed on poly and single crystalline Cu substrates. The growth behavior of graphene and its characterization were shown utilizing the optical microscopic image and its image analysis. As a result in the analysis of graphene growth, it was found out the graphene is growing always in particular direction in relation to the crystalline direction of a single grain in polycrystalline Cu substrate. With the image analysis it was possible to show the characterization of graphene, such as the growth direction and the number of layers showing single, double and triple layers, within the neighboring single grains in polycrystalline Cu. In addition, the relatively large area of graphene with about $3mm^2$ on Cu(111) having high quality, single layer, and single crystalline was shown along with its characterization.

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참고문헌

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