JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Effects of Ga Composition Ratio and Annealing Temperature on the Electrical Characteristics of Solution-processed IGZO Thin-film Transistors

  • Lee, Dong-Hee (Department of Electronics Engineering, Pusan National University) ;
  • Park, Sung-Min (Department of Electronics Engineering, Pusan National University) ;
  • Kim, Dae-Kuk (Department of Electronics Engineering, Pusan National University) ;
  • Lim, Yoo-Sung (Department of Electronics Engineering, Pusan National University) ;
  • Yi, Moonsuk (Department of Electronics Engineering, Pusan National University)
  • Received : 2013.10.21
  • Accepted : 2013.12.26
  • Published : 2014.04.30
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Abstract

Bottom gate thin-film transistors were fabricated using solution processed IGZO channel layers with various gallium composition ratios that were annealed on a hot plate. Increasing the gallium ratio from 0.1 to 0.6 induced a threshold voltage shift in the electrical characteristics, whereas the molar ratio of In:Zn was fixed to 1:1. Among the devices, the IGZO-TFTs with gallium ratios of 0.4 and 0.5 exhibited suitable switching characteristics with low off-current and low SS values. The IGZO-TFTs prepared from IGZO films with a gallium ratio of 0.4 showed a mobility, on/off current ratio, threshold voltage, and subthreshold swing value of $0.1135cm^2/V{\cdot}s$, ${\sim}10^6$, 0.8 V, and 0.69 V/dec, respectively. IGZO-TFTs annealed at $300^{\circ}C$, $350^{\circ}C$, and $400^{\circ}C$ were also fabricated. Annealing at lower temperatures induced a positive shift in the threshold voltage and produced inferior electrical properties.

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References

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