Journal of the Korean Society for Precision Engineering (한국정밀공학회지)

Korean Society for Precision Engineering (한국정밀공학회)
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ISB Bonding Technology for TSV (Through-Silicon Via) 3D Package

TSV 기반 3차원 반도체 패키지 ISB 본딩기술

  • Lee, Jae Hak (Department of Ultra Precision Machines and Systems, Korea Institute of Machinery and Materials) ;
  • Song, Jun Yeob (Department of Ultra Precision Machines and Systems, Korea Institute of Machinery and Materials) ;
  • Lee, Young Kang (Department of Ultra Precision Machines and Systems, Korea Institute of Machinery and Materials) ;
  • Ha, Tae Ho (Department of Ultra Precision Machines and Systems, Korea Institute of Machinery and Materials) ;
  • Lee, Chang-Woo (Department of Ultra Precision Machines and Systems, Korea Institute of Machinery and Materials) ;
  • Kim, Seung Man (Department of Ultra Precision Machines and Systems, Korea Institute of Machinery and Materials)
  • 이재학 (한국기계연구원 초정밀시스템연구실) ;
  • 송준엽 (한국기계연구원 초정밀시스템연구실) ;
  • 이영강 (한국기계연구원 초정밀시스템연구실) ;
  • 하태호 (한국기계연구원 초정밀시스템연구실) ;
  • 이창우 (한국기계연구원 초정밀시스템연구실) ;
  • 김승만 (한국기계연구원 초정밀시스템연구실)
  • Received : 2014.08.12
  • Accepted : 2014.09.18
  • Published : 2014.10.01
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Abstract

In this work, we introduce various bonding technologies for 3D package and suggest Insert-Bump bonding (ISB) process newly to stack multi-layer chips successively. Microstructure of Insert-Bump bonding (ISB) specimens is investigated with respect to bonding parameters. Through experiments, we study on find optimal bonding conditions such as bonding temperature and bonding pressure and also evaluate in the case of fluxing and no-fluxing condition. Although no-fluxing bonding process is applied to ISB bonding process, good bonding interface at $270^{\circ}C$ is formed due to the effect of oxide layer breakage.

Keywords

References

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