The Journal of the Korea institute of electronic communication sciences (한국전자통신학회논문지)

Korea Institute of Electronic Communication Science (한국전자통신학회)
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Influence of the process conditions for the amorphous silicon on the HSG-Si formation

비정질 규소막의 공정조건이 HSG-Si 형성에 미치는 영향

  • 정재영 (LG 디스플레이) ;
  • 강성준 (전남대학교 전기및반도체공학과) ;
  • 정양희 (전남대학교 전기및반도체공학과)
  • Received : 2015.10.01
  • Accepted : 2015.11.23
  • Published : 2015.11.30
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Abstract

In this paper, the processing conditions of the amorphous silicon film growth were investigated the effect in forming the HSG-Si on the surface of the storage electrode. As a result, when the amorphous silicon film phosphorus concentration is greater than $5.5{\pm}0.1E19atoms/cm^3$, HSG-Si is not formed correctly and showed the concentration dependency of HSG formation. Also, the optimum condition of the phosphorus concentration for amorphous silicon and HSG thickness are $4.5E19atoms/cm^3$ and $450{\AA}$, respectively, because of the HSG thickness over the $500{\AA}$ create to bit failure according to a short of the electrodes and the electrode.

본 논문은 비정질 규소막 성장의 공정 조건이 저장 전극의 표면에 HSG-Si를 형성할 때 미치는 영향을 조사하였다. 그 결과 비정질 규소막의 인 농도가 $5.5{\pm}0.1E19atoms/cm^3$ 이상이면 HSG-Si가 제대로 형성되지 않는 인 농도 의존성을 나타내었다. 또한 HSG 두께가 $500{\AA}$ 이상에서는 전극과 전극을 단락시키는 비트 불량을 유발하기 때문에 비정질 규소막의 인농도는 $4.5E19atoms/cm^3$, HSG 임계 두께는 $450{\AA}$이 최적 조건임을 확인하였다.

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References

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