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Analysis and Visualization of Temperature Field for Wafer Batch in Furnace

반응로 내 웨이퍼 배치의 온도장 분석 및 가시화

  • 강승환 (성균관대학교 대학원 기계공학과) ;
  • 이승호 (성균관대학교 대학원 기계공학과) ;
  • 김병훈 (삼성전자 메모리사업부 D기술팀) ;
  • 고한서 (성균관대학교 기계공학부)
  • Published : 2015.12.31

Abstract

The temperature of the wafer batch in the furnace was calculated and its visualized temperature field was analyzed. The main heat transfer mechanisms from the heater wall to the wafers were radiation and conduction, and the finite difference method was used to analyze the complex heat transfer including those two mechanisms. The visualized temperature field shows that the direction of the heat flux in the wafer batch varies during the heating process, and the heat in the wafer batch diffuses faster by conduction within the wafer than by radiation between the wafers, in the condition of the constant temperature at the heater wall and cap.

Keywords

References

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Cited by

  1. Analysis of temperature distribution of wafers inside LPCVD chamber for improvement of thickness uniformity vol.14, pp.2, 2016, https://doi.org/10.5407/JKSV.2016.14.2.025
  2. Analysis of Temperature and Gas Flow Distribution in Chamber with Wafer Batch pp.1521-0537, 2018, https://doi.org/10.1080/01457632.2018.1474598