Journal of the Korean Physical Society

Korean Physical Society (한국물리학회)
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Simple Thermal Diverging Model of The Thin Epitaxial Layer of InP Laser Diodes

  • Ji, Byeong-Gwan (Department of Information and Communication Engineering, INHA University, LED-STAR Center) ;
  • Lee, Seung-Gol (Department of Information and Communication Engineering, INHA University, LED-STAR Center) ;
  • Park, Se-Geun (Department of Information and Communication Engineering, INHA University, LED-STAR Center) ;
  • O, Beom-Hoan (Department of Information and Communication Engineering, INHA University, LED-STAR Center)
  • Received : 2015.06.22
  • Accepted : 2015.08.11
  • Published : 2015.10.15
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Abstract

With increasing use of high-power LEDs (light-emitting diodes) and LDs (laser diodes), a critical issue arises regarding their thermal design due to the increasing thermal loss and temperature, and characterizing the thermal resistance $R_{th}$ of the p-InP layer as a function of the layer thickness to optimize the thermal conductivity and optical loss is important. We propose a simple intuitive heat-transfer model with a diverging effective width, and the analytic form of $R_{th}$(d) agrees well with the $R_{th}$ dataset that is simulated for most typical cases with various widths of the striped active layers and values of the p-InP thickness. Therefore, we propose a H (hyperbolic)-model that provides a simple analytic form of $R_{th,H}$(d) by using only the relaxation control parameter, h, as a convenient thermal design tool for various LD systems.

Keywords

Acknowledgement

Supported by : National Research Foundation of Korea (NRF)

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