The Transactions of the Korean Institute of Power Electronics (전력전자학회논문지)

The Korean Institute of Power Electronics (전력전자학회)
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Totem-pole Bridgeless Boost PFC Converter Based on GaN FETs

GaN FET을 이용한 토템폴 구조의 브리지리스 부스트 PFC 컨버터

  • Jang, Paul (Dept. of Electrical and Computer Eng., Seoul National Univ.) ;
  • Kang, Sang-Woo (Dept. of Electrical and Computer Eng., Seoul National Univ.) ;
  • Cho, Bo-Hyung (Dept. of Electrical and Computer Eng., Seoul National Univ.) ;
  • Kim, Jin-Han (DMC R&D Center, Samsung Electronics) ;
  • Seo, Han-Sol (DMC R&D Center, Samsung Electronics) ;
  • Park, Hyun-Soo (DMC R&D Center, Samsung Electronics)
  • Received : 2015.01.30
  • Accepted : 2015.04.05
  • Published : 2015.06.20
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Abstract

The superiority of gallium nitride FET (GaN FET) over silicon MOSFET is examined in this paper. One of the outstanding features of GaN FET is low reverse-recovery charge, which enables continuous conduction mode operation of totem-pole bridgeless boost power factor correction (PFC) circuit. Among many bridgeless topologies, totem-pole bridgeless shows high efficiency and low conducted electromagnetic interference performance, with low cost and simple control scheme. The operation principle, control scheme, and circuit implementation of the proposed topology are provided. The converter is driven in two-module interleaved topology to operate at a power level of 5.5 kW, whereas phase-shedding control is adopted for light load efficiency improvement. Negative bias circuit is used in gate drivers to avoid the shoot-through induced by high speed switching. The superiority of GaN FET is verified by constructing a 5.5 kW prototype of two-module interleaved totem-pole bridgeless boost PFC converter. The experiment results show the highest efficiency of 98.7% at 1.6 kW load and an efficiency of 97.7% at the rated load.

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References

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