Current Applied Physics

Korean Physical Society (한국물리학회)
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Highly stable hafnium-tin-zinc oxide thin film transistors with stacked bilayer active layers

  • Han, Dong-Suk (Department of Nanoscale Semiconductor Engineering, Hanyang University) ;
  • Park, Jae-Hyung (Department of Nanoscale Semiconductor Engineering, Hanyang University) ;
  • Kang, Min-Soo (Department of Nanoscale Semiconductor Engineering, Hanyang University) ;
  • Choi, Duck-Kyun (Department of Materials Science and Engineering, Hanyang University) ;
  • Park, Jong-Wan (Department of Materials Science and Engineering, Hanyang University)
  • Received : 2014.07.31
  • Accepted : 2014.11.24
  • Published : 2015.02.28
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Abstract

Hf-Sn-Zn-O (HTZO) thin films were prepared on $SiO_2/SiN_x$ substrates at room temperature by the direct current (DC) magnetron sputtering of Hf-doped Sn-Zn-O targets. The characteristics of films with different amounts of Hf were analyzed. Amorphous HTZO films were obtained by increasing the Hf content, while polycrystalline films have not shown with Hf doping. With the proper Hf concentration in the HTZO films (~2.0 atomic % Hf/(Hf + Sn + Zn + O)), HTZO films demonstrated good performance as an oxide semiconductor channel material in thin film transistors (TFTs) with a field effect mobility (${\mu}_{FE}$) of $10.9cm^2V^{-1}s^{-1}$, an on/off current ratio of $10^9$, and a subthreshold voltage swing of 0.71 V/decade.

Keywords

Acknowledgement

Supported by : National Research Foundation of Korea (NRF)

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