Electronic Materials Letters

  • 제11권1호
  • /
  • Pages.93-99
  • /
  • 2015
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  • 1738-8090(pISSN)
  • /
  • 2093-6788(eISSN)
대한금속재료학회 (The Korean Institute of Metals and Materials)
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Comparative Study of Global Warming Effects during Silicon Nitride Etching Using C3F6O/O2 and C3F6/O2 Gas Mixtures

  • Kim, Ka Youn (Department of Advanced Materials Science & Engineering, Sungkyunkwan University) ;
  • Moon, Hock Key (Department of Advanced Materials Science & Engineering, Sungkyunkwan University) ;
  • Lee, Nae-Eung (Department of Advanced Materials Science & Engineering, Sungkyunkwan University) ;
  • Hong, Bo Han (WONIK IPS Ltd.) ;
  • Oh, Soo Ho (WONIK IPS Ltd.)
  • 투고 : 2014.03.11
  • 심사 : 2014.06.09
  • 발행 : 2015.01.20
⟨ 이전 논문 다음 논문 ⟩

초록

$C_3F_6$ and $C_3F_6O$ gases were investigated as replacement gases for $SF_6$ used in display industry due to their low global warming potential and short lifetime. In the $C_3F_6/O_2$ and $C_3F_6O/O_2$ capacitively coupled plasmas, $Si_3N_4$ etch conditions were varied by controlling process parameters. The global warming effects were quantified as million metric ton carbon equivalents (MMTCEs) obtained from the volumetric emission of by-product and etch gases. A lower MMTCE value and higher etch rate process with combination of high and low source frequencies, $f_{HF}$ (27.12 MHz)/$f_{LF}$ (2 MHz), were observed for the $C_3F_6O/O_2$ chemistry than for the $C_3F_6/O_2$ chemistry.

키워드

과제정보

연구 과제번호 : Development of fundamental technology for 10 nm process semiconductor and 10 G size large area process with high plasma density and VHF condition

연구 과제 주관 기관 : Ministry of Trade, Industry and Energy (MOTIE, Republic of Korea)

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