Electronic Materials Letters

The Korean Institute of Metals and Materials (대한금속재료학회)
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Effect of Post-Deposition Annealing on the Structural, Optical and Electrical Properties of IGZO Films

  • Jeon, Jae-Hyun (School of Materials Science and Engineering, University of Ulsan) ;
  • Gong, Tae-Kyung (School of Materials Science and Engineering, University of Ulsan) ;
  • Kong, Young-Min (School of Materials Science and Engineering, University of Ulsan) ;
  • Lee, Hak Min (Research Institute of Display Technology, INFOVION) ;
  • Kim, Daeil (School of Materials Science and Engineering, University of Ulsan)
  • Received : 2014.11.15
  • Accepted : 2014.12.10
  • Published : 2015.05.20
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Abstract

IGZO thin films were deposited on glass substrates via RF magnetron co-sputtering with $In_2O_3$ and GZO targets. The films were then vacuum annealed at $100^{\circ}C$, $200^{\circ}C$ and $300^{\circ}C$ for 30 minutes to investigate the effects of the annealing temperature on the structural, electrical, and optical properties of the films. Although XRD patterns demonstrated that all films had an amorphous phase regardless of annealing temperature, electrical resistivity decreased to as low as $3.2{\times}10^{-4}{\Omega}cm$ at an annealing temperature of $300^{\circ}C$. The optical transmittance in the visible wavelength region also improved from 80 to 83%. The figure of merit shows that IGZO films annealed at $300^{\circ}C$ have the higher optical and electrical performance than other films prepared under different conditions in this study.

Keywords

Acknowledgement

Supported by : National Research Foundation of Korea (NRF)

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