Journal of the Korean Physical Society

Korean Physical Society (한국물리학회)
권호 표지
DOI QR코드

DOI QR Code

Improvement in the Optical and Electrical Properties of Ga-doped Zinc-oxide Films by Using Nano-imprinted Pattern Arrays and Post-annealing

  • LEE, Su Yeon (Department of Advanced Materials Engineering, Korea Polytechnic University) ;
  • LEE, Seong Eui (Department of Advanced Materials Engineering, Korea Polytechnic University) ;
  • LEE, Hee Chul (Department of Advanced Materials Engineering, Korea Polytechnic University) ;
  • LEE, Ho Nyun (Surface Technology R&BD Group, Incheon Regional Division, Korea Institute of Industrial Technology) ;
  • KIM, Hyun Jong (Surface Technology R&BD Group, Incheon Regional Division, Korea Institute of Industrial Technology)
  • Received : 2014.09.25
  • Accepted : 2014.11.27
  • Published : 2015.01.31
⟨ Previous Next ⟩

Abstract

The effects of nano-imprinted arrays and post-annealing on the optical and the electrical properties of sputtered Ga-doped zinc-oxide (GZO) films were intensively investigated to develop suitable electrodes for photonic applications. We fabricated nano-structures with a GZO circular pattern with a diameter of 250 nm by using UV nano-imprinting lithography and the lift-off process. The nano-structured GZO/glass substrate showed a high optical transmittance of 91.0% at a wavelength of 550 nm, which was increased by about 2.2% compared to that of unprocessed GZO/glass. Then nano-structured GZO/glass substrate was rapidly annealed under different conditions to acquire a high optical transmittance and a low resistivity. The optimized nano-structured GZO film postannealed at $400^{\circ}C$ showed the highest optical transmittance of 92.0% and an improved resistivity of $1.3{\times}10^{-3}{\Omega}{\cdot}cm$.

Keywords

References

  1. F. Iskandar, A. B. Suryamas, M. Kawabe, M. M. Munir, K. Okuyama, T. Tarao and T. Nishitani, Jpn. J. Appl. Phys. 49, 010213 (2010). https://doi.org/10.1143/JJAP.49.010213
  2. C. Y. Tsai and C. Huang, Jpn. J. Appl. Phys. 52, 7 (2013).
  3. S. Venkatachalam, H. Nanjo, F. M. B. Hassan, K. Kawasaki, Y. Wakui, H. Hayashi and T. Ebina, Jpn. J. Appl. Phys. 50, 088004 (2011). https://doi.org/10.7567/JJAP.50.088004
  4. S. J. Hong and J. I. Han, Electron. Mater. Lett. 2, 131 (2006).
  5. J. H. Choi, S. H. Jang and J. S. Jang, Electron. Mater. Lett. 9, 425 (2013). https://doi.org/10.1007/s13391-013-0023-3
  6. J. W. Ok, H. D. Park and Y. M. Sung, Electron. Mater. Lett. 9, 527 (2013). https://doi.org/10.1007/s13391-013-0041-1
  7. M. J. Lee, T. I. Lee, J. H. Lim, J. S. Bang, W. Lee, T. Y. Lee and J. M. Myoung, Mater. Lett. 5, 127 (2009).
  8. B. B. Kim, S. G. Seo, Y. S. Lim, H. S. Choi, W. S. Seo, and H. Park, Mater. Lett. 5, 599 (2009).
  9. Y. Yoshida, S. Tanaka, I. Hiromitsu, Y. Fujita and K. Yoshino, Jpn. J. Appl. Phys. 47, 867 (2008). https://doi.org/10.1143/JJAP.47.867
  10. V. Rajarathinam, S. A. B. Allen and P. A. Kohi, Microelect. Eng. 93, 19 (2012). https://doi.org/10.1016/j.mee.2011.12.010
  11. A. Z. Khokhar, A. Gaston, I. Obieta and N. Gadegaard, Microelect. Eng. 88, 3347 (2011). https://doi.org/10.1016/j.mee.2011.06.023
  12. S. Gilles, C. Kaulen, M. Pabst, U. Simon, A. Offengauser and D. Mayer, Nanotechnology 22, 295301 (2011). https://doi.org/10.1088/0957-4484/22/29/295301
  13. S. H. Hong, B. J. Bae, K. Y. Yang, J. H. Jeong, H. S. Kim and H. Lee, Electron. Lett. 5, 139 (2009). https://doi.org/10.3365/eml.2009.12.139
  14. S. Kang, Jpn. J. Appl. Phys. 43, 5706 (2004). https://doi.org/10.1143/JJAP.43.5706
  15. S. Y. Chou, P. R. Krauss and P. J. Renstrom, Appl. Phys. Lett. 67, 3114 (1995). https://doi.org/10.1063/1.114851
  16. Y. Hirai, S. Harada, S. Isaka, M. Kobayashi and Y. Tanaka, Appl. Phys. Lett. 41, 4186 (2002).
  17. H. Lee and G. Y. Jung, Jpn. J. Appl. Phys. 43, 8369 (2004). https://doi.org/10.1143/JJAP.43.8369
  18. G. Y. Jung et al., Appl. Phys. A 78, 1169 (2004). https://doi.org/10.1007/s00339-003-2393-0
  19. S. H. Lee, S. Y. Lee, S. E. Lee, H. Lee and H. C. Lee, Electron. Mater. Lett. 10, 351 (2014). https://doi.org/10.1007/s13391-013-3230-z
  20. S. Y. Hwang, H. Y. Jung, K. Y. Yang, J. H. Jeong, K. W. Choi and H. Lee, Electron. Lett. 4, 14 (2008).
  21. B. E. E. Kastenmeier, P. J. Matsuo, J. J. Beulens and G. S. Oehrlein, J. Vac. Sci. Technol. 14, 2802 (1996). https://doi.org/10.1116/1.580203
  22. S. H. Hong, B. J. Bae, K. Y. Yang, J. H. Jeong, H. S. Kim and H. Lee, Electron. Lett. 5, 13 (2009). https://doi.org/10.3365/eml.2009.03.013
  23. B. Bilenberg, S. Jacobsen, C. Pastore, T. Nielsen, S. R. Enghoff, C. Jeppesen, A. Vig Larsen and A. Kristensen, Jpn. J. Appl. Phys. 44, 5606 (2005). https://doi.org/10.1143/JJAP.44.5606
  24. J. Taniguchi, Y. Tokano, I. Miyamoto, M. Komuro, H. Hiroshima, K. Kobayashi, T. Miyazaki and H. Ohyi, Jpn. J. Appl. Phys. 39, 7070 (2000). https://doi.org/10.1143/JJAP.39.7070
  25. H. Kim, B. D Ahn, C. H. Lee, K. A. Jeon, H. S. Kang and S. Y. Lee, J. Appl. Phys. 100, 223513 (2006).
  26. J. H. Yu, J. H. Kim, T. S. Jeong, M. S. Akhtar, C. J. Youn and K. J. Hong, Electron. Mater. Lett. 7, 215 (2011). https://doi.org/10.1007/s13391-011-0907-z
  27. L. M. Wong, S. Y. Chiam, J. Q. Huang, S. J. Wang, J. S. Pan and W. K. Chim, J. Appl. Phys. 108, 033702 (2010). https://doi.org/10.1063/1.3465445
  28. K. W. Jang, H. J. Oh, I. K. Kim, I. H. Kim and J. I. Lee, Electron. Mater. Lett. 6, 193 (2010). https://doi.org/10.3365/eml.2010.12.193
  29. H. S. Kim, J. W. Lim, S. J. Yun, H. Lee and H. C. Lee, J. Nanosci. Nanotechnol. 12, 3464 (2012). https://doi.org/10.1166/jnn.2012.5565
  30. T. Minami, H. Sato, K. Ohashi, T. Tomofuji and S. Takata, J. Cryst. Growth 117, 370 (1992). https://doi.org/10.1016/0022-0248(92)90778-H
  31. J. Y. Cho, S. H. Hong, K. J. Byeon and H. Lee, Thin Solid Films 521, 115 (2012). https://doi.org/10.1016/j.tsf.2012.02.040
  32. W. T. Yen, Y. C. Lin, P. C. Yao, J. H. Ke and Y. L. Chen, Thin Solid Films 518, 3882 (2010). https://doi.org/10.1016/j.tsf.2009.10.149
  33. Q. B. Ma, Z. Z. Ye, H. P. He, L. P. Zhu, J. Y. Huang, Y. Z. Zhang and B. H. Zhao, Scripta Mater. 58, 21 (2008). https://doi.org/10.1016/j.scriptamat.2007.09.009

Cited by

  1. Design and Fabrication of Information Security Films with Microlouver Pattern and ZnO Nano-Ink Filling vol.56, pp.4, 2015, https://doi.org/10.4191/kcers.2019.56.4.06