Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Analysis of Sputter-Deposited SnO thin Film with SnO/Sn Composite Target

SnO/Sn 혼합 타겟을 이용한 SnO 박막 제조 및 특성

  • Kim, Cheol (Graduate School of NID Fusion Technology, Seoul National University of Science and Technology) ;
  • Kim, Sungdong (Department of Mechanical System Design Engineering, Seoul National University of Science and Technology) ;
  • Kim, Sarah Eunkyung (Graduate School of NID Fusion Technology, Seoul National University of Science and Technology)
  • 김철 (서울과학기술대학교 NID융합기술대학원) ;
  • 김성동 (서울과학기술대학교 기계시스템디자인공학과) ;
  • 김은경 (서울과학기술대학교 NID융합기술대학원)
  • Received : 2016.01.28
  • Accepted : 2016.03.18
  • Published : 2016.04.27
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Abstract

Tin oxides have been studied for various applications such as gas detecting materials, transparent electrodes, transparent devices, and solar cells. p-type SnO is a promising transparent oxide semiconductor because of its high optical transparency and excellent electrical properties. In this study, we fabricated p-type SnO thin film using rf magnetron sputtering with an SnO/Sn composite target; we examined the effects of various oxygen flow rates on the SnO thin films. We fundamentally investigated the structural, optical, and electrical properties of the p-type SnO thin films utilizing X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV/Vis spectrometry, and Hall Effect measurement. A p-type SnO thin film of $P_{O2}=3%$ was obtained with > 80% transmittance, carrier concentration of $1.12{\times}10^{18}cm^{-3}$, and mobility of $1.18cm^2V^{-1}s^{-1}$. With increasing of the oxygen partial pressure, electrical conductivity transition from p-type to n-type was observed in the SnO crystal structure.

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References

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