Korean Journal of Metals and Materials (대한금속재료학회지)

The Korean Institute of Metals and Materials (대한금속재료학회)
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Effect of Current Densities on the Electromigration Failure Mechanisms of Flip-Chip Sn-Ag Solder Bump

전류밀도에 따른 플립칩 Sn-Ag 솔더 범프의 Electromigration 손상기구 분석

  • Kim, Gahui (School of Materials Science and Engineering, Andong National University) ;
  • Son, Kirak (School of Materials Science and Engineering, Andong National University) ;
  • Park, Gyu-Tae (Amkor Technology Korea Inc) ;
  • Park, Young-Bae (School of Materials Science and Engineering, Andong National University)
  • 김가희 (안동대학교 신소재공학부, 청정에너지소재기술연구센터) ;
  • 손기락 (안동대학교 신소재공학부, 청정에너지소재기술연구센터) ;
  • 박규태 (앰코테크놀로지 코리아) ;
  • 박영배 (안동대학교 신소재공학부, 청정에너지소재기술연구센터)
  • Received : 2017.05.11
  • Accepted : 2017.08.16
  • Published : 2017.11.05
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Abstract

The effect of current densities on the electromigration (EM) failure mechanism of flip chip Cu/Ni/Sn-Ag/Cu solder bumps was investigated under stressing conditions at current densities ranging from $5.0{\sim}6.9{\times}10^3A/cm^2$ at $150^{\circ}C$. The EM failure times at $5.0{\times}10^3A/cm^2$ were around 11 times longer than at $6.9{\times}10^3A/cm^2$. A systematic failure analysis considering stressing time showed that a current density of $5.0{\times}10^3A/cm^2$ induced pancake void propagation near the $Cu_6Sn_5$ intermetallic compound/solder interface at the cathode, while a current density of $6.9{\times}10^3A/cm^2$ produced severe Joule heating due to high current crowding near the solder/$Cu_6Sn_5$ interface. This was due to electrons entering the location at the cathode, which led to local melting of the solder and fast Cu consumption. It was determined that the EM failure mechanisms of flip chip Sn-Ag solder strongly depend not only on the Ni barrier effect but also on current density, which drives the dominant failure mechanisms of pancake voiding and local Joule-heating melting.

Keywords

Acknowledgement

Supported by : 한국연구재단, KSRC

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