References
- C. H. Ahn, Y. Y. Kim, D. C. Kim, S. K. Mohanta and H. K. Cho, J. Appl. Phys., 105, 013502 (2012).
- M. Ardyanian and N. Sedigh, Bull. Mater. Sci., 37, 1309 (2014). https://doi.org/10.1007/s12034-014-0076-4
- M. B. Rahman, S. H. Keshmirl, Sens. Lett., 7, 1 (2009). https://doi.org/10.1166/sl.2009.1001
- S. Yun, J. Lee, J. Yang and S. Lim., Physica B, 405, 413 (2010). https://doi.org/10.1016/j.physb.2009.08.297
- R. Jaramillo and S. Ramanathan, Sol. Energy Mater. Sol. Cells, 95, 602 (2011). https://doi.org/10.1016/j.solmat.2010.09.025
- H. Agura, A. Suzuki, T. Matsushita, T. Aoki and M. Okuda, Thin Solid Films, 445, 263 (2003). https://doi.org/10.1016/S0040-6090(03)01158-1
- S. Y. Kuo, W. C. Chen, F. I. Lai, C. P. Cheng, H. C. Kuo, S. C. Wang and W. F. Hsieh, J. Cryst. Growth, 287, 78 (2006). https://doi.org/10.1016/j.jcrysgro.2005.10.047
- D. Y. Lee, J. W. Lee, G. H. An, D. H. Riu and H. J. Ahn, Korean J. Mater. Res., 26, 258 (2016). https://doi.org/10.3740/MRSK.2016.26.5.258
- D. Y. Shin, J. W. Beav, B. R. Koo and H. J. Ahn, Korean J. Mater. Res., 27, 390 (2017). https://doi.org/10.3740/MRSK.2017.27.7.390
- I. S. Han and I. K. Park, Korean J. Mater. Res., 27, 403 (2017). https://doi.org/10.3740/MRSK.2017.27.8.403
- I. Isakov, H. Faber, M. Grell, G. W. Moon, N. Pliatsikas, T. Kehagias, G. P. Dimitrakopulos, P. P. Patsalas, R. Li, and T. D. Anthopoulos, Adv. Funct. Mater., 1606407 (2017).
- M. Ortel and V. Wagner, J. Cryst. Growth, 363, 185 (2013). https://doi.org/10.1016/j.jcrysgro.2012.10.043
- Q. Ahsanulhaq, A. Umar and Y. B. Hahn, Nanotechnology, 18, 115603 (2007). https://doi.org/10.1088/0957-4484/18/11/115603
- C. X. Xu and X. W. Sun, Jpn.J. Appl. Phys., 42, 4949 (2003). https://doi.org/10.1143/JJAP.42.4949
- S. Chen, R. M. Wilson and R. Binions, J. Mater. Chem. A, 3, 5794 (2015). https://doi.org/10.1039/C5TA00446B
- N. Qin, Q. Xiang, H. B. Zhao, J. C. Zhang and J. Q. Xu, Cryst. Eng. Comm., 16, 7062 (2014). https://doi.org/10.1039/C4CE00637B
- X. L. Chen, X. H. Geng, J. M. Xue, D. K. Zhang, G. F. Hou and Y. Zhao, J. Cryst. Growth, 296, 43 (2006). https://doi.org/10.1016/j.jcrysgro.2006.08.028
- T. Dedova, O. Volobujeva and J. Klauson, Nanoscale. Res. Lett., 2, 391 (2007). https://doi.org/10.1007/s11671-007-9072-6
- T. Terasako, S. Shirakata and T. Kariya, Thin Solid Films, 420, 13 (2002).
- R. A. Laudise and A. A. Ballman, J. Phys. Chem., 64, 688 (1960). https://doi.org/10.1021/j100834a511
- X. Cai, B. Han, S. Deng, Y. Wang, C. Dong, Y. Wang and I. Djerdj, Cryst. Eng. Comm., 16, 7761 (2014). https://doi.org/10.1039/C4CE00899E
- D. J. E. Harvie and D. F. Fletcher, Int. J. Heat Mass Transfer, 44, 2643 (2001). https://doi.org/10.1016/S0017-9310(00)00304-5
- J. C. Vioguie and J. Spitz, J. Electrochem. Soc., 122, 585 (1975). https://doi.org/10.1149/1.2134266
- D. Polsongkram, P. Chamninok, S. Pukird , L. Chow, O. Lupan, G. Chai, H. Khallaf, S. Park, A. Schulte, Physica B, 403, 3713 (2008). https://doi.org/10.1016/j.physb.2008.06.020
- M. Ortel, V. Wagner, J. Cryst. Growth, 363, 185. (2013). https://doi.org/10.1016/j.jcrysgro.2012.10.043
- U. P. Muecke, G. L. Messing, L. J. Gauckler, Thin Solid Films, 517, 1515 (2009). https://doi.org/10.1016/j.tsf.2008.08.158
- S. Kumar Shah, S. Kumar Chatterjee and A. Bhattarai, J. Chem., 2016, 2176769 (2016).
- X. Zhu, T. Kawaharamura, A. Z. Stieg, C. Biswas, L. Li, Z. Ma, M. A. Zurbuchen, Q. Pei, and K. L. Wang, Nano Lett., 15, 4948 (2015). https://doi.org/10.1021/acs.nanolett.5b01157
- Y. M. Qiao, S. Chandra, Int. J. Heat Mass Transfer, 39, 1379 (1996). https://doi.org/10.1016/0017-9310(95)00220-0
- M. Shirota, M. A. J. Van Limbeek, C. Sun, A. Prosperetti and D. Lohse, Phys. Rev. Lett., 116, 064501 (2016). https://doi.org/10.1103/PhysRevLett.116.064501
- W. J. Li, E. W. Sji, W. Z. Zhong and Z. W. Yin, J. Cryst. Growth, 203, 186 (1999). https://doi.org/10.1016/S0022-0248(99)00076-7
- H. Zhang, D. Yang, Y. Ji, X. Ma, J. Xu and D. Que, J. Phys. Chem. B, 10, 3955 (2004).