Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Contamination Particle and Cracking Behavior of the Anodic Oxidation in Sulfuric Acid Containing Cerium Salt

세륨염을 첨가한 황산법 양극산화피막의 오염입자 및 열크랙 거동

  • So, Jongho (Department of Advanced Materials Engineering, Daejeon University) ;
  • Yun, Ju-Young (Center for Materials and Energy Measurement, Korea Research Institute of Standards and Science) ;
  • Shin, Jae-Soo (Department of Advanced Materials Engineering, Daejeon University)
  • 소종호 (대전대학교 신소재공학과) ;
  • 윤주영 (한국표준과학연구원 소재에너지융합측정센터) ;
  • 신재수 (대전대학교 신소재공학과)
  • Received : 2018.10.23
  • Accepted : 2018.12.18
  • Published : 2018.12.31
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Abstract

The parts of equipment for semiconductor are protected by anodic aluminum oxide film to prevent corrosion. This study investigated contamination particle and cracking behavior of anodic oxidation in sulfuric acid containing cerium salt. The insulating properties of the sample were evaluated by measuring the breakdown voltage. It was confirmed that the breakdown voltage was about 50% higher when the cerium salt was added, and that the breakdown voltage after the heat treatment was 55% and 35% higher at $300^{\circ}C$ and $400^{\circ}C$, respectively. After heating at $300^{\circ}C$ and $400^{\circ}C$, cracks were observed in non cerium and cerium 3mM, and more cracks occur at $400^{\circ}C$ than at $30^{\circ}C$. The amount of contamination particles generated in the plasma is about 45% less than that of non-cerium specimens.

Keywords

References

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