Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Wide Dynamic Range CMOS Image Sensor with Adjustable Sensitivity Using Cascode MOSFET and Inverter

  • Seong, Donghyun (School of Electronics Engineering, Kyunpook National University) ;
  • Choi, Byoung-Soo (School of Electronics Engineering, Kyunpook National University) ;
  • Kim, Sang-Hwan (School of Electronics Engineering, Kyunpook National University) ;
  • Lee, Jimin (School of Electronics Engineering, Kyunpook National University) ;
  • Shin, Jang-Kyoo (School of Electronics Engineering, Kyunpook National University)
  • Received : 2018.05.24
  • Accepted : 2018.05.30
  • Published : 2018.05.31
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Abstract

In this paper, a wide dynamic range complementary metal-oxide-semiconductor (CMOS) image sensor with the adjustable sensitivity by using cascode metal-oxide-semiconductor field-effect transistor (MOSFET) and inverter is proposed. The characteristics of the CMOS image sensor were analyzed through experimental results. The proposed active pixel sensor consists of eight transistors operated under various light intensity conditions. The cascode MOSFET is operated as the constant current source. The current generated from the cascode MOSFET varies with the light intensity. The proposed CMOS image sensor has wide dynamic range under the high illumination owing to logarithmic response to the light intensity. In the proposed active pixel sensor, a CMOS inverter is added. The role of the CMOS inverter is to determine either the conventional mode or the wide dynamic range mode. The cascode MOSFET let the current flow the current if the CMOS inverter is turned on. The number of pixels is $140(H){\times}180(V)$ and the CMOS image sensor architecture is composed of a pixel array, multiplexer (MUX), shift registers, and biasing circuits. The sensor was fabricated using $0.35{\mu}m$ 2-poly 4-metal CMOS standard process.

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References

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