Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Characteristics of 4H-SiC Junction Barrier Schottky Diode

4H-SiC JBS Diode의 전기적 특성 분석

  • Lee, Young-Jae (Department of Electronic Materials Engineering, Kwang-woon University) ;
  • Cho, Seulki (Department of Electronic Materials Engineering, Kwang-woon University) ;
  • Seo, Ji-Ho (Department of Electronic Materials Engineering, Kwang-woon University) ;
  • Min, Seong-Ji (Department of Electronic Materials Engineering, Kwang-woon University) ;
  • An, Jae-In (Department of Electronic Materials Engineering, Kwang-woon University) ;
  • Oh, Jong-Min (Department of Electronic Materials Engineering, Kwang-woon University) ;
  • Koo, Sang-Mo (Department of Electronic Materials Engineering, Kwang-woon University) ;
  • Lee, Deaseok (Department of Electronic Materials Engineering, Kwang-woon University)
  • 이영재 (광운대학교 전자재료공학과) ;
  • 조슬기 (광운대학교 전자재료공학과) ;
  • 서지호 (광운대학교 전자재료공학과) ;
  • 민성지 (광운대학교 전자재료공학과) ;
  • 안재인 (광운대학교 전자재료공학과) ;
  • 오종민 (광운대학교 전자재료공학과) ;
  • 구상모 (광운대학교 전자재료공학과) ;
  • 이대석 (광운대학교 전자재료공학과)
  • Received : 2018.05.09
  • Accepted : 2018.06.15
  • Published : 2018.09.01
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Abstract

1,200 V class junction barrier schottky (JBS) diodes and schottky barrier diodes (SBD) were simultaneously fabricated on the same 4H-SiC wafer. The resulting diodes were characterized at temperatures from room temperature to 473 K and subsequently compared in terms of their respective I-V characteristics. The parameters deduced from the observed I-V measurements, including ideality factor and series resistance, indicate that, as the temperature increases, the threshold voltage decreases whereas the ideality factor and barrier height increase. As JBS diodes have both Schottky and PN junction structures, the proper depletion layer thickness, $R_{on}$, and electron mobility values must be determined in order to produce diodes with an effective barrier height. The comparison results showed that the JBS diodes exhibit a larger effective barrier height compared to the SBDs.

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References

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