Clean Technology (청정기술)

The Korean Society of Clean Technology (한국청정기술학회)
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The Removal of Si3N4 Particles from the Wafer Surface Using Supercritical Carbon Dioxide Cleaning

웨이퍼 표면의 Si3N4 파티클 제거를 위한 초임계 이산화탄소 세정

  • Received : 2018.05.18
  • Accepted : 2018.06.25
  • Published : 2018.09.28
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Abstract

In this study, the removal of $Si_3N_4$ particles from the surface of a silicon wafer was investigated by using supercritical carbon dioxide, the IPA co-solvent and cleaning additive chemicals. First, the solubility of several surfactants and binders in supercritical carbon dioxide solubility and particle dispersibility in the binders were evaluated in order to confirm their suitability for the supercritical cleaning process. Particle removal experiments were carried out with adjusting various process parameters and reaction conditions. The surfactants used in the experiment showed little particle removal effect, producing secondary contamination on the surface of wafers. On the other hand, 5 wt% (with respect to $scCO_2$) of the cleaning additive mixture of trimethyl phosphate, IPA, and trace HF resulted in 85% of particle removal efficiency after $scCO_2$ flowing for 4 minutes at $50^{\circ}C$, 2000 psi, and the flow rate of $15mL\;min^{-1}$.

본 연구에서는 초임계 이산화탄소와 공용매 첨가물을 이용하여 실리콘 웨이퍼 표면의 $Si_3N_4$ 파티클을 제거하는 기술을 조사하였다. 우선, 몇 가지 계면활성제와 첨가제에 관한 초임계 이산화탄소 용해도 및 파티클 분산성 평가를 통하여 초임계 공정에 대한 적합성을 확인하였다. 다양한 변수를 조정하여 파티클 세정 실험을 진행하여 최적의 제거 조건을 확립하였다. 실험에 사용된 계면활성제는 파티클 제거 효과가 떨어졌으며, 실험 후 이차 오염물이 형성됨을 확인하였다. 반면 trimethyl phosphate는 IPA공용매와 미량의 HF와 혼합된 세정 첨가제로서 초임계 이산화탄소에 5 wt%로 포함한 유체로 온도 $50^{\circ}C$, 압력 2000 psi에서 $15mL\;min^{-1}$의 유속으로 4분 간 세정한 결과, 85%의 파티클 제거 효율을 나타내었다.

Keywords

References

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