The Journal of the Korea institute of electronic communication sciences (한국전자통신학회논문지)

Korea Institute of Electronic Communication Science (한국전자통신학회)
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Structural and Optical Properties of ZnS Thin Films Fabricated by Using RF Sputtering and Rapid Thermal Annealing Process for Buffer Layer in Thin Film Solar Cells

박막태양전지 버퍼층 적용을 위해 RF 스퍼터링 및 급속열처리 공정으로 제작한 황화아연 박막의 구조적 광학적 특성

  • Received : 2020.07.07
  • Accepted : 2020.08.15
  • Published : 2020.08.31
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Abstract

Buffer layer in CIGS thin-film solar cells improves energy conversion efficiency through band alignment between the absorption layer and the window layer. ZnS is a non-toxic II-VI compound semiconductor with direct-transition band gaps and n-conductivity as well as with excellent lattice matching for CIGS absorbent layers. In this study, the structural and optical properties of ZnS thin films, deposited by RF magnetron sputtering method and subsequently performed by the rapid thermal annealing treatment, were investigated for the buffer layer. The zincblende cubic structures along (111), (220), and (311) were shown in all specimens. The rapid thermal annealed specimens at the relatively low temperatures were polycrystalline structure with the wurtzite hexagonal structures along (002). Rapid thermal annealing at high temperatures changed the polycrystalline structure to the single crystal of the zincblende cubic structures. Through the chemical analysis, the zincblende cubic structure was obtained in the specimen with the ratio of Zn/S near stoichiometry. ZnS thin film showed the shifted absorption edge towards the lower wavelength as annealing temperature increased, and the mean optical transmittance in the visible light range increased to 80.40% under 500℃ conditions.

CIGS 박막 태양 전지의 버퍼층은 흡수층과 윈도우층 사이의 밴드정렬(band alignment)을 통해 에너지 변환 효율을 향상시킨다. ZnS는 무독성의 II-VI 반도체 화합물로서 직접천이형 광대역 밴드갭과 n형 전도성을 가지며, 높은 광투과성, 높은 굴절률 등의 우수한 전기적, 광학적 특성을 가지고 있고, 우수한 격자정합을 가지는 물질이다. 이 연구에서, RF 마그네트론 스퍼터링 방법에 의해 증착 후 급속 열처리에 의해 제작된 ZnS 버퍼층 박막의 구조적, 광학적 특성의 상관관계에 대해 고찰하였다. (111), (220), (311) 면의 섬아연광 입방정 구조를 확인할 수 있고, 상대적으로 저온에서 급속열처리를 수행한 시료에서는 (002) 면의 우르쯔광 육방정 구조가 함께 나타나는 다결정이 되었다. 고온에서 급속열처리 수행한 시료에서는 섬아연광 입방정 구조의 단결정으로 상전이 된다. 화학적 성분 분석을 통해서 Zn/S의 비율이 화학양론에 근접한 시료에서 섬아연광 입방정 구조의 단결정이 나타났음을 확인하였다 급속열처리 온도가 증가할수록 흡수단이 다소간 단파장 쪽으로 이동되고, 가시광 파장 범위에서 평균 광투과율이 증가하는 경향성을 보이며 500℃ 조건에서는 80.40%로 향상되었다.

Keywords

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