Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Mechanical characteristics of polycrystalline 3C-SiC thin films using Ar carrier gas by APCVD

순 아르콘 캐리어 가스와 APCVD로 성장된 다결정 3C-SiC 박막의 기계적 특성

  • 한기봉 (울산대학교 전기전자정보시스템공학부) ;
  • 정귀상 (울산대학교 전기전자정보시스템공학부)
  • Published : 2007.07.31
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Abstract

This paper describes the mechanical characteristics of poly 3C-SiC thin films grown on Si wafers with thermal oxide. In this work, the poly 3C-SiC thin film was deposited by APCVD method using only Ar carrier gas and single precursor HMDS at $1100^{\circ}C$. The elastic modulus and hardness of poly 3C-SiC thin films were measured using nanoindentation. Also, the roughness of surface was investigated by AFM. The resulting values of elastic modulus E, hardness H and the roughness of the poly 3C-SiC film are 305 GPa, 26 GPa and 49.35 nm respectively. The mechanical properties of the grown poly 3C-SiC film are better than bulk Si wafers. Therefore, the poly 3C-SiC thin film is suitable for abrasion, high frequency and MEMS applications.

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References

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