DOI QR코드

DOI QR Code

Adhesive bonding using thick polymer film of SU-8 photoresist for wafer level package

  • Na, Kyoung-Hwan (School of Electrical Engineering and Computer Science, Seoul National University) ;
  • Kim, Ill-Hwan (School of Electrical Engineering and Computer Science, Seoul National University) ;
  • Lee, Eun-Sung (School of Electrical Engineering and Computer Science, Seoul National University) ;
  • Kim, Hyeon-Cheol (School of Electrical Engineering and Computer Science, Seoul National University) ;
  • Chun, Kuk-Jin (School of Electrical Engineering and Computer Science, Seoul National University)
  • Published : 2007.09.29

Abstract

For the application to optic devices, wafer level package including spacer with particular thickness according to optical design could be required. In these cases, the uniformity of spacer thickness is important for bonding strength and optical performance. Packaging process has to be performed at low temperature in order to prevent damage to devices fabricated before packaging. And if photosensitive material is used as spacer layer, size and shape of pattern and thickness of spacer can be easily controlled. This paper presents polymer bonding using thick, uniform and patterned spacing layer of SU-8 2100 photoresist for wafer level package. SU-8, negative photoresist, can be coated uniformly by spin coater and it is cured at $95^{\circ}C$ and bonded well near the temperature. It can be bonded to silicon well, patterned with high aspect ratio and easy to form thick layer due to its high viscosity. It is also mechanically strong, chemically resistive and thermally stable. But adhesion of SU-8 to glass is poor, and in the case of forming thick layer, SU-8 layer leans from the perpendicular due to imbalance to gravity. To solve leaning problem, the wafer rotating system was introduced. Imbalance to gravity of thick layer was cancelled out through rotating wafer during curing time. And depositing additional layer of gold onto glass could improve adhesion strength of SU-8 to glass. Conclusively, we established the coating condition for forming patterned SU-8 layer with $400{\mu}m$ of thickness and 3.25 % of uniformity through single coating. Also we improved tensile strength from hundreds kPa to maximum 9.43 MPa through depositing gold layer onto glass substrate.

Keywords

References

  1. S. Horiguchi, M. Sitti, and H. Hashimoto, 'Visualization interface for AFM-based nano-manipulation', Industrial Electronics, 1999. ISlE '99. Proc. ofthe IEEE International Symposium on, vol. 1, pp. 310-315, Bled, Slovenia, 1999
  2. G. S. Chung and H. S. Woo, 'Fabrication of SiCN microstructure for super-high temperature MEMS using POMS mold and its characteristics', J. of the Korean Sensors Society, vol. 15, no. 1, pp. 53-57, 2006 https://doi.org/10.5369/JSST.2006.15.1.053
  3. Y. J. Chuang, F. G. Tseng, J. H. Cheng, and W. K. Lin, 'A novel method of embedded micro-channels by using SU-8 thick-film photoresists', Sensors and Actuator A, vol. 103, pp. 64-69, 2003 https://doi.org/10.1016/S0924-4247(02)00325-4
  4. P. A. Hammond and O. R .S. Cumming, 'Encapsulation of a liquid-sensing microchip using SU-8 photoresist', J. of Microelectronic Engineering, vol. 73-74, pp. 893-897, 2004
  5. Y. H. Kim, Y. J. Kim, K. I. Kim, and J. H. Kim, 'A capacitive type humidity sensor using a polyimide film for hermeticity measurement of micro packages', J. of the Korean Sensors Society, vol. 13, no. 4, pp. 132-135, 2004
  6. C. T. Pan, H. Yang, S. C. Shen, M. C. Chou, and H. P. Chou, 'A low-temperature wafer bonding using pattemable materials', J. of Micromechanics and Microengineering, vol. 12, pp. 611-615, 2002 https://doi.org/10.1088/0960-1317/12/5/315
  7. F. Niklaus, P. Enoksson, E. Kalvesten, and G. Stemme, 'Low-temperature full wafer adhesive bonding', J. of Micromechanics and Microengineering, vol. 11, pp. 100-107, 2001 https://doi.org/10.1088/0960-1317/11/2/303
  8. E. H. Conradie and O. F. Moore, 'SU-8 thick photoresist processing as a functional material for MEMS applications', J. of Micromechanics and Microengineering, vol. 12, pp. 368-374, 2002 https://doi.org/10.1088/0960-1317/12/4/303

Cited by

  1. Wafer-Level Package of RF MEMS Switch using Au/Sn Eutectic Bonding and Glass Dry Etch vol.20, pp.1, 2011, https://doi.org/10.5369/JSST.2011.20.1.58