Abstract
In this paper, we report an investigation into the effect of heat treatment on the morphological and electrical properties of aluminum-doped zinc-oxide (ZnO:Al) films. ZnO:Al films were deposited on glass substrates by DC magnetron sputtering from a ZnO target mixed with 2 wt\% Al$_2$O$_3$. We carried out heat treatments in argon and oxygen atmospheres at 100 $\sim$ 400 $^\circ$C for 60 min. As the annealing temperature was increased, the film showed a looser structure, smaller grain size, and rougher surface. On increasing the annealing temperature, the film resistivity was increased due to a decrease in the carrier concentration. The electrical resistivity increased by 34 \% with increasing annealing temperature up to 400 $^\circ$C.