Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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TiN Coatings by Reactive Magnetron Sputtering Under Various Substrate Bias Voltages

기판바이어스 인가에 따른 반응성 마그네트론 스퍼터링에 의한 TiN 코팅

  • Seo, Pyong-Sup (Department of Advanced Materials Science and Engineering, Mokpo National University) ;
  • Chun, Sung-Yong (Department of Advanced Materials Science and Engineering, Mokpo National University)
  • 서평섭 (목포대학교 신소재공학과) ;
  • 전성용 (목포대학교 신소재공학과)
  • Published : 2008.12.31
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Abstract

Reactively magnetron sputtered TiN films were deposited on Si wafers under varying bias voltage and characterized by X-ray diffraction, field-emission scanning electron microscopy and Nanoindentation. The films deposited under an Ar + $N_2$ atmosphere exhibited a mixed (200)-(111) orientation with a strong (200) texture, which subsequently changed to a strong (111) texture with increasing bias voltage. The changes in texture and grain size of the TiN thin films are due to one or a combination of factors such as strain energy, surface free energy, surface diffusivity and adatom mobility. The influence of each factor depends on the processing conditions. The average deposition rate and grain size were calculated from FE-SEM images of the films indicating that the deposition rate was lower at the films deposited under bias voltage.

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References

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