Journal of the Korean Physical Society

Korean Physical Society (한국물리학회)
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Sol-Gel derived Ga-In-Zn-O Semiconductor Layers for Solution-Processed Thin-Film Transistors

  • Koo, Chang-Young (Department of Materials Science and Engineering, Yonsei University) ;
  • Kim, Dongjo (Department of Materials Science and Engineering, Yonsei University) ;
  • Jeong, Sunho (Department of Materials Science and Engineering, Yonsei University) ;
  • Moon, Jooho (Department of Materials Science and Engineering, Yonsei University) ;
  • Park, Chiyoung (Department of Nano Systems Engineering, Inje University) ;
  • Jeon, Minhyon (Department of Nano Systems Engineering, Inje University) ;
  • Sin, Won-Chol (R&D Center, INOSTEK Inc.) ;
  • Jung, Jinha (R&D Center, INOSTEK Inc.) ;
  • Woo, Hyun-Jung (R&D Center, INOSTEK Inc.) ;
  • Kim, Seung-Hyun (R&D Center, INOSTEK Inc.) ;
  • Ha, Jowoong (R&D Center, INOSTEK Inc.)
  • Published : 2008.07.01
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Abstract

We have prepared a solution processed oxide semiconductor layer for thin-film transistors. The oxide semiconductor thin-films were prepared by spin coating a sol-gel precursor solution based on Ga and In-co-doped ZnO (GIZO). The sol-gel-derived GIZO films were uniform and have smooth surface morphology (rms. roughness ~0.7 nm). The device performance of the solution-processed thin-film transistors was analyzed as a function of the doping concentration and the annealing temperature. The transistors annealed at 450 ℃ showed clear switching behavior and output characteristic with relatively high field effect mobility (~0.1 $cm^2$/V·s) and low threshold voltage (~5.4 V). Even when annealed at 300 ℃, they showed reasonable field effect mobility (~0.03 $cm^2$/V·s) and a lower threshold voltage (~-0.2 V). Our ndings demonstrate the feasibility of using sol-gel-based oxide semiconductor transistors for successful application to cost-effective and mass-producible display and optoelectronic devices with enhanced device performance.

Keywords

Acknowledgement

This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab Program funded by the Ministry of Science and Technology (No. R0A-2005-000-10011-0).

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