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Effect of Electron Irradiation on the Properties of GZO/TiO2 Thin Films

전자빔 조사에 따른 GZO/TiO2 박막의 특성 변화

  • Kim, Seung-Hong (School of Materials Science and Engineering, University of Ulsan) ;
  • Kim, Sun-Kyung (School of Materials Science and Engineering, University of Ulsan) ;
  • Kim, So-Young (School of Materials Science and Engineering, University of Ulsan) ;
  • Heo, Sung-Bo (School of Materials Science and Engineering, University of Ulsan) ;
  • Choi, Dong-Hyuk (Dongkook Ind. Co., Ltd.) ;
  • Son, Dong-Il (Dongkook Ind. Co., Ltd.) ;
  • Kim, Daeil (School of Materials Science and Engineering, University of Ulsan)
  • Received : 2013.08.23
  • Accepted : 2013.09.11
  • Published : 2013.11.30

Abstract

We have considered the influence of electron irradiation energy of 300, 600 and 900 eV on the stuctural, electrical and optical properties of GZO/$TiO_2$ thin films prepared with RF magentron sputtering. The optical transmittance and electrical resistivity of the films were dependent on the electron's irradiation energy. The electron irradiated GZO/$TiO_2$ films at 900 eV are grown as a hexagonal wurtzite phase and the resistivity is decreased with electron irradiation energy. The GZO/$TiO_2$ films irradiated at 900 eV shows the lowest resistivity of $4.3{\times}10^{-3}{\Omega}cm$. The optical transmittance in a visible wave length region also increased with the electron irradiation energy. The film that electron irradiated at 900 eV shows 82% of optical transmittance and higher work function of 5.18 eV in this study.

Keywords

References

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