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Effect of Electron Irradiation Energy on the Properties of In2O3 Thin Films

전자빔 조사 에너지에 따른 In2O3 박막의 특성 변화

  • Heo, Sung-Bo (School of Materials Science and Engineering, University of Ulsan) ;
  • Chun, Joo-Yong (School of Materials Science and Engineering, University of Ulsan) ;
  • Lee, Young-Jin (School of Materials Science and Engineering, University of Ulsan) ;
  • Lee, Hak-Min (School of Materials Science and Engineering, University of Ulsan) ;
  • Kim, Daeil (School of Materials Science and Engineering, University of Ulsan)
  • 허성보 (울산대학교 첨단소재공학부) ;
  • 천주용 (울산대학교 첨단소재공학부) ;
  • 이영진 (울산대학교 첨단소재공학부) ;
  • 이학민 (울산대학교 첨단소재공학부) ;
  • 김대일 (울산대학교 첨단소재공학부)
  • Received : 2012.04.16
  • Accepted : 2012.05.21
  • Published : 2012.05.31

Abstract

We have considered the effect of electron irradiation energy of 300, 600 and 900 eV on structural, electrical and optical properties of $In_2O_3$ films prepared with RF magnetron sputtering. In this study, the thin film crystallization, optical transmittance and sheet resistance are dependent on the electron's irradiation energy. The electron irradiated $In_2O_3$ films at 900 eV are grown as a hexagonal wurtzite phase. The sheet resistance decreases with a increase in electron irradiation energy and $In_2O_3$ film irradiated at 900 eV shows the lowest sheet resistance of $110{\Omega}/{\Box}$. The optical transmittance of $In_2O_3$ films in a visible wave length region also depends on the electron irradiation energy. The film that at 900 eV shows the higher figure of merit than another films prepared in this study.

Keywords

References

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