Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Synthesis of Ga2O3 powders by precipitation method

침전법을 이용한 Ga2O3 분말의 합성

  • Jung, Jong-Yeol (Icheon Branch, Korea Institute of Ceramic Engineering and Technology) ;
  • Kim, Sang-Hun (Icheon Branch, Korea Institute of Ceramic Engineering and Technology) ;
  • Kang, Eun-Tae (School of Nano and Advanced Materials Engineering, Gyeongsang National University) ;
  • Kim, Jin-Ho (Icheon Branch, Korea Institute of Ceramic Engineering and Technology) ;
  • Han, Kyu-Sung (Icheon Branch, Korea Institute of Ceramic Engineering and Technology) ;
  • Hwang, Kwang-Teak (Icheon Branch, Korea Institute of Ceramic Engineering and Technology) ;
  • Cho, Woo-Seok (Icheon Branch, Korea Institute of Ceramic Engineering and Technology)
  • 정종열 (한국세라믹기술원 이천분원) ;
  • 김상훈 (한국세라믹기술원 이천분원) ;
  • 강은태 (국립경상대학교 공과대학 재료공학부 재료공학과) ;
  • 김진호 (한국세라믹기술원 이천분원) ;
  • 한규성 (한국세라믹기술원 이천분원) ;
  • 황광택 (한국세라믹기술원 이천분원) ;
  • 조우석 (한국세라믹기술원 이천분원)
  • Received : 2013.12.09
  • Accepted : 2014.01.10
  • Published : 2014.02.28
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Abstract

In this study, we investigated synthesis and characteristics of gallium oxide ($Ga_2O_3$) powders prepared by precipitation method. $Ga_2O_3$ powders were synthesized using $Ga(NO_3)_3$ as a starting material and $NH_4OH$ as a precipitant. The oxidation temperature of $Ga(OH)_3$ and phase transition temperature of $Ga_2O_3$ was revealed using TG-DSC analysis. The crystal structural change of $Ga_2O_3$ powders was investigated by XRD analysis. The morphologies and size distributions of $Ga_2O_3$ particles were analyzed using SEM.

본 연구에서는 InGaZnO 반도체를 제조하기 위하여 출발물질로 사용되는 $Ga_2O_3$분말을 침전법을 이용하여 합성하였다. 침전법의 공정 변수인 출발물질로 사용된 $Ga(NO_3)_3$의 농도와 aging 시간 및 온도를 제어하여 $Ga_2O_3$ 분말을 합성하고 그 물성을 분석하였다. TG-DSC 분석을 통하여 $Ga(OH)_3$의 산화온도 및 $Ga_2O_3$의 상전이 온도를 확인하였고, XRD 분석을 통해 $Ga_2O_3$의 결정구조와 결정성의 변화를 확인하였다. 또한 SEM 관찰을 통해 $Ga_2O_3$분말의 미세 구조와 평균 입도 및 입도 분포를 분석하였다.

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References

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