Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
권호 표지
DOI QR코드

DOI QR Code

Analysis of Electrical Characteristics of Oxide Semiconductor of ZnO, SnO2 and ZTO

ZnO, SnO2, ZTO 산화물반도체의 전기적인 특성 분석

  • Oh, Teresa (Department of Semiconductor Engineering, Cheongju University)
  • Received : 2015.05.19
  • Accepted : 2015.07.02
  • Published : 2015.07.27
Download PDF
⟨ Previous Next ⟩

Abstract

To study the characteristics of ZTO, which is made using a target mixed $ZnO:SnO_2=1:1$, the ZnO and $SnO_2$ were analyzed using PL, XRD patterns, and electrical properties. Resulting characteristics were compared with the electrical characteristics of ZnO, $SnO_2$, and ZTO. The electrical characteristics of ZTO were found to improve with increasing of the annealing temperature due to the high degree of crystal structures at high temperature. The crystal structure of $SnO_2$ was also found to increase with increasing temperatures. So, the structure of ZTO was found to be affected by the annealing temperature and the molecules of $SnO_2$; the optical property of ZTO was similar to that of ZnO. Among the ZTO films, ZTO annealed at the highest temperature showed the highest capacitance and Schottky contact.

Keywords

References

  1. G. Kenugapal and S. -J. Kim, Current Appl. Phys., 11, S381 (2011). https://doi.org/10.1016/j.cap.2011.03.030
  2. S. Akasaka, K. Tamura, K. Nakahara, T. Tanabe, A. Kamisawa and M. Kawasaki1, Appl. Phys. Lett., 93, 123309 (2008). https://doi.org/10.1063/1.2989125
  3. W. T. Chen, S. Y. Lo, S. C. Kao, H. W. Zan, C. C. Tsai, J. H. Lin, C. H. Fang and C. C. Lee, IEEE Electron. Dev. Lett., 32, 1552 (2011). https://doi.org/10.1109/LED.2011.2165694
  4. S. W. Tsao, T. C. Chang, S. Y. Huang, M. C. Chen, S. C. Chen, C. T. Tsai, Y. J. Kuo, Y. C. Chen and W. C. Wub, Solid State Electronics, 54, 1497 (2010). https://doi.org/10.1016/j.sse.2010.08.001
  5. D. W. Jeong, J. J. Kim and J. O Lee, J. Korean Phys. Soc., 59(5), 3133 (2011). https://doi.org/10.3938/jkps.59.3133
  6. K. Nomura, T. Kamiya and H. Hosono, Adv. Mater., 23, 3431 (2011). https://doi.org/10.1002/adma.201101410
  7. J. S. Lee, Y. J. Kwack and W. S. Choi, J. Korean Phys. Soc., 59(5), 3305 (2011).
  8. D. Cha, S. Lee, J. Jung and I. An, J. Korean Phys. Soc., 56(3), 846 (2010). https://doi.org/10.3938/jkps.56.846
  9. J. Maserjian, J. Vac. Sci. Technol., 11, 996 (1974). https://doi.org/10.1116/1.1318719
  10. K. Nomura, T. Kamiya, H. Ohta, M. Hirano and H. Hosono, Appl. Phys. Lett., 93, 192107 (2008). https://doi.org/10.1063/1.3020714
  11. O. Mitrofanov and M. Mantra, J. Appl. Phys., 95, 6414 (2004). https://doi.org/10.1063/1.1719264
  12. M. E. Lopes, H. L. Gomes, M. C. R. Medeiros, P. Barquinha, L. Pereira, E. Fortunato, R. Martins and I. Ferreira, Appl. Phys. Lett., 95, 063502 (2009). https://doi.org/10.1063/1.3187532
  13. T. Oh and C. K. Choi, J. Korean Phys. Soc., 56, 1150 (2010). https://doi.org/10.3938/jkps.56.1150
  14. Y. Y. Peng, T. E. Hsieh and C. H. Hsu, Nanotechnology, 17, 174 (2006) https://doi.org/10.1088/0957-4484/17/1/028
  15. J. Maserjian and N. Zamani, Appl. Phys. Lett., 53, 559 (1982).
  16. J. Heo, H. J. Kim, J. H. Han and J. W. Shon, Thin Solid Films, 515, 5035 (2007). https://doi.org/10.1016/j.tsf.2006.10.095
  17. J. G. Simmons, Phys. Rev., 155, 657 (1967). https://doi.org/10.1103/PhysRev.155.657

Cited by

  1. Study on GZO Thin Films as Insulator, Semiconductor and Conductor Depending on Annealing Temperature vol.26, pp.6, 2016, https://doi.org/10.3740/MRSK.2016.26.6.342
  2. Effect of Double Junctions in Nano Structure Oxide Materials and Gas Sensitivity vol.19, pp.5, 2018, https://doi.org/10.1007/s42341-018-0055-3